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| SI1406DH New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.065 @ VGS = 4.5 V 20 0.075 @ VGS = 2.5 V 0.096 @ VGS = 1.8 V ID (A) 3.9 3.6 3.2 D TrenchFETr Power MOSFETS: 1.8-V Rated D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code D 2 5 D AB G 3 4 S XX YY Lot Traceability and Date Code Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C ID TA = 85_C IDM IS 1.4 1.56 0.81 -55 to 150 2.8 10 0.9 1.0 0.52 W _C 2.2 A Symbol VDS VGS 5 secs 20 Steady State Unit V "8 3.9 3.1 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 70684 S-04475--Rev. A, 13-Aug-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 60 100 34 Maximum 80 125 45 Unit _C/W C/W 1 SI1406DH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "8 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS = 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 3.9 A Drain-Source On-State Resistancea rDS(on) VGS = 2.5 V, ID = 3.6 A VGS = 1.8 V, ID = 2 A Forward Transconductancea gfs VSD VDS = 10 V, ID = 3.9 A IS = 1.4 A, VGS = 0 V 8 0.053 0.062 0.079 11 0.75 1.1 0.065 0.075 0.096 S V W 0.45 "100 1 5 V nA mA m A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1.4 A. di/dt = 100/ms VDD = 10 V, RL = 20 W ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 3.9 A 4.9 1.0 0.95 27 47 54 29 35 41 71 81 44 60 ns 7.5 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 5 thru 2 V I D - Drain Current (A) 10 Transfer Characteristics 8 I D - Drain Current (A) 8 6 1.5 V 4 6 4 TC = 125_C 2 25_C 2 1V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 70684 S-04475--Rev. A, 13-Aug-01 2 SI1406DH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.20 r DS(on) - On-Resistance ( W ) 800 Vishay Siliconix Capacitance C - Capacitance (pF) 0.16 600 Ciss 400 0.12 VGS = 1.8 V 0.08 VGS = 2.5 V 200 0.04 VGS = 4.5 V 0 0 2 4 6 8 10 0 Crss 4 8 12 16 20 Coss 0.00 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 3.9 A 4 1.8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 3.9 A r DS(on) - On-Resistance (W) (Normalized) 1.6 1.4 3 1.2 2 1.0 1 0.8 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.20 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.16 ID = 2 A 0.12 ID = 3.9 A I S - Source Current (A) 1 TJ = 150_C 0.08 TJ = 25_C 0.04 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 70684 S-04475--Rev. A, 13-Aug-01 www.vishay.com 3 SI1406DH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.2 30 25 ID = 250 mA -0.0 Power (W) 20 Single Pulse Power 0.1 V GS(th) Variance (V) -0.1 15 -0.2 10 -0.3 5 -0.4 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA =100_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 70684 S-04475--Rev. A, 13-Aug-01 |
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